| PART |
Description |
Maker |
| RD06HVF1-101 RD06HVF1 |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RD100HHF1 |
MOS FET type transistor specifically designed for HF High power amplifiers applications.
|
Mitsubishi Electric Semiconductor
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFR193W Q62702-F1510 |
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
http://
SIEMENS[Siemens Semiconductor Group]
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| SPI-236-17 SPI-236-17A |
Ultraminiature photointerrupter (single-transistor type) 超小型光电断路器（单晶体管型
2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
GaAs Infrared LED Ultraminiature photointerrupter (single-transistor type)
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| TPCP8H02 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| HTT1115E |
High Frequency Amplifiers(Twin Type)
|
Hitachi Semiconductor
|
| M62366GP |
3 V Type 8-bit 12ch D/A Converter with Buffer Amplifiers
|
Renesas Electronics Corporation
|
| M62368 M62368GP |
3V TYPE 8-BIT 6CH D-A CONVERTER WITH BUFFER AMPLIFIERS
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
